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azanylidynegallane

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Origin: China

Cas No: 25617-97-4

Specification: 99%min

Min order Quantity: 1 /kg

Supply Ability: 80 mt/month

Lead time: 7 days for OEM, 3 days for ready goods

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Product Description

Property

CAS No.: 25617-97-4 Formula: GaN Molecular Weight: 83.72970

Description

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in bright light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405nm) laser diodes possible, without use of nonlinear optical frequency-doubling.
Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. Military and space applications could also benefit as devices have shown stability in radiation environments. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies.

Basic Info

Chemical Name	azanylidynegallane
Synonyms	EINECS 247-129-0; nitridogallium; Gallium mononitride; Gallium nitride;
CAS No.	25617-97-4
Molecular Formula	GaN
Molecular Weight	83.72970
PSA	23.79000
LogP	-0.14072

Properties

Appearance & Physical State	Grey / Yellow Crystalline solid
Melting Point	800ºC
Stability	Stability Store under dry argon. Water and moisture sensitive. Incompatible with strong oxidizing agents.

Safety Info